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Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence

✍ Scribed by Zolnai, Z.; Ster, A.; KhaÌnh, N. Q.; Battistig, G.; Lohner, T.; Gyulai, J.; KoÌtai, E.; Posselt, M.

No coin nor oath required. For personal study only.

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