## Abstract Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Se
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
✍ Scribed by Hongping Zhao; Guangyu Liu; Ronald A. Arif; Nelson Tansu
- Book ID
- 108271806
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 783 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0038-1101
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