GaN-based light-emitting devices (LEDs) with and without a rear distributed Bragg reflector (DBR) were grown by metal-organic chemical vapor deposition. The integrated electroluminescence (EL) intensity of LED with a rear nitride DBR showed a super-linear increase up to a current density of 135 A/cm
Efficiency droop in nitride-based light-emitting diodes
✍ Scribed by Piprek, Joachim
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 672 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. This feature article provides a snapshot of the present state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop.magnified image
Illustration of LED efficiency droop (details in Fig. 13).
📜 SIMILAR VOLUMES
## Abstract A gallium nitride based micro‐cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift‐off process. Cavity thinning was carried o
## Abstract In the Editor's Choice [1] the development and demonstration of a highly efficient warm‐white all‐nitride phosphor‐converted light emitting diode (pc‐LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials doped with Eu^2+^.
## Abstract The development and demonstration of a highly efficient warm‐white all‐nitride phosphor‐converted light emitting diode (pc‐LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu^2+^. For colo