Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

✍ Scribed by Pattison, P. Morgan ;Sharma, Rajat ;David, Aurelian ;Waki, Ichitaro ;Weisbuch, Claude ;Nakamura, Shuji

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 184 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200565408

✦ Synopsis

Abstract

A gallium nitride based micro‐cavity light emitting diode emitting at a peak wavelength of 498 nm has been fabricated. The epitaxial structure was grown by metalorganic chemical vapor deposition, and the device was fabricated using a laser lift‐off process. Cavity thinning was carried out using reactive ion etching until a cavity length of roughly 830 nm (corresponding to a cavity order of ∼8 for λ = 498 nm in GaN) was achieved. Electroluminescence measurements of the micro‐cavity device show a narrowed spectral width compared to the un‐thinned device, and angularly resolved spectral measurements yielded a spectral shift, evincive of micro‐cavity effects. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)