The crystallization kinetics of Ni x Ti 1 À x (x= 53.5, 48.1, and 42.9) alloy thin films have been investigated by means of differential scanning calorimeter under nonisothermal conditions. The onset crystallization temperature T x , crystallization peak temperature T p and effective activation ener
Crystallization and melting of thin BixSe1−x layers
✍ Scribed by H Atmani; G Coquerel; C Vautier
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 254 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Melting and crystallization of silicon layers in a SOI structure (SiSiO~2~Si) at millisecond lamp heating have been studied by model calculations using the solution of conduction equation. Pulse heating conditions that do not lead to silicon substrate melting under SiO~2~ have been de
GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm 2 for nude