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Laser melting of GaAs covered with thin metal layers

✍ Scribed by B. J. Garcia; J. Martinez; J. Piqueras

Publisher
Springer
Year
1990
Tongue
English
Weight
834 KB
Volume
51
Category
Article
ISSN
1432-0630

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✦ Synopsis

GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm 2 for nude GaAs surface and slightly below 0.25 J/cm 2 for GaAs covered with a 120 A tin layer are predicted in reasonable agreement with experimental results.

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The impedance behavior of metals covered with a thin electrolyte layer has been investigated. A transmission line (TML) circuit type behavior, which was attributed to an uneven current distribution profile over a working electrode, was observed in a wider frequency range as the thickness and the con