Laser melting of GaAs covered with thin
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B. J. Garcia; J. Martinez; J. Piqueras
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Article
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1990
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Springer
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English
β 834 KB
GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm 2 for nude