Melting and crystallization of silicon layers on insulator with millisecond lamp heating

✍ Scribed by Prof. L. N. Aleksandrov; Dr. V. A. Zinovyev

• Publisher: John Wiley and Sons
• Year: 1990
• Tongue: English
• Weight: 407 KB
• Volume: 25
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170250308

✦ Synopsis

Abstract

Melting and crystallization of silicon layers in a SOI structure (SiSiO~2~Si) at millisecond lamp heating have been studied by model calculations using the solution of conduction equation. Pulse heating conditions that do not lead to silicon substrate melting under SiO~2~ have been determined. For pulses of 1 and 4.4 ms duration the silicon melt lifetime on the SiO~2~ surface has been estimated. The lengths of the crystal oriented growth from windows in the SiO~2~ layer that open the single‐crystalline silicon substrate have been measured (25 and 64 μm).