Crystallinity and interdiffusion in InP/InGaAs quantum wells grown by Hydride VPE

✍ Scribed by K. Makita; K. Taguti

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 502 KB
• Volume: 4
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(88)90274-1

✦ Synopsis

This paper reports the results of a study on interfacial quality and thermal interdiffusion for InP/InGaAs Quantum Wells [QW) grown by hydride VPE. By controlling well layer as thin as 25A, it was estimated that island and valley, whose height was one monolayer and whose lateral size was one third of exciton radius, existed at the interface. For the first time, interdiffusion coefficients for InPAnGaAs QW were obtained from 77K PL peak energy shift. Typical values were 2.5X lo-" cm2/sec and 1.5X10-'a cm%ec for the annealing temperature of 700°C and 75O"C, respectively. These values are over 10 times larger than that in AlGaAs/GaAs QW, and less 10e2 times smaller than that in InAlAs/InGaAs QW.