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Crystal shape of GaAs nanocrystals deposited on Si(100) by molecular beam epitaxy

✍ Scribed by Hiroyuki Usui; Hidehiro Yasuda; Hirotaro Mori

Book ID
108289745
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
983 KB
Volume
516
Category
Article
ISSN
0040-6090

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✍ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. πŸ“‚ Article πŸ“… 1990 πŸ› Elsevier Science 🌐 English βš– 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob