๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy

โœ Scribed by Hiroyuki Usui; Hidehiro Yasuda; Hirotaro Mori

Book ID
106397777
Publisher
Springer US
Year
2007
Tongue
English
Weight
262 KB
Volume
19
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Quality of molecular-beam-epitaxy-grown
Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry
โœ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob