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Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

✍ Scribed by V. P. Kuznetsov; R. A. Rubtsova; V. N. Shabanov; A. P. Kasatkin; S. V. Sedova; G. A. Maksimov; Z. F. Krasil’nik; E. V. Demidov

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