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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

✍ Scribed by V. P. Kuznetsov; V. B. Shmagin; M. N. Drozdov; M. O. Marychev; K. E. Kudryavtsev; M. V. Kuznetsov; B. A. Andreev; A. V. Kornaukhov; Z. F. Krasilnik

Book ID: 111444841
Publisher: Springer
Year: 2011
Tongue: English
Weight: 155 KB
Volume: 45
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782611010143

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