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Cross-sectional transmission electron microscopy of metallographic damage in hollandite nuclear wasteforms

✍ Scribed by D.R.G Mitchell; D.J Attard; M.L Carter

Book ID
114340824
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
184 KB
Volume
48
Category
Article
ISSN
1044-5803

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It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 Γ‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been direc