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Contact Damage in Single-Crystalline Silicon Investigated by Cross-Sectional Transmission Electron Microscopy

✍ Scribed by STEFAN JOHANSSON; JAN-AKE SCHWEITZ

Book ID
110823980
Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
998 KB
Volume
71
Category
Article
ISSN
0002-7820

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It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 Γ‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been direc