Creep-controlled electromigration in near-threshold interconnects

✍ Scribed by E. Glickman; M. Nathan

• Book ID: 104306739
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 96 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00299-3

✦ Synopsis

A model of creep affected electromigration (CAEM) in near-threshold conductors ('near-threshold' denoting length L or current density j close to the corresponding Blech thresholds L and j ) is shown to fit electromigration (EM) threshold and th th kinetics data better than the Blech model. Its most significant prediction is that the overall rate of EM displacement in near-threshold conductors (or short polygranular segments in near-bamboo interconnects) is controlled by a strictly local mechanical process, diffusional creep, most likely by a bulk diffusion Nabarro-Herring process.