Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

✍ Scribed by T. Gebel; L. Rebohle; J. Sun; W. Skorupa; A.N. Nazarov; I. Osiyuk

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 204 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00636-7

✦ Synopsis

In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO2 layers. Thermally grown 80 nm thick SiO2 layers were implanted with Ge ions at energies of 30 -50 keV to peak concentrations of 1-6 at%. Subsequently rapid thermal annealing was performed at 1000 • C for 6, 30 and 150 s under a nitrogen atmosphere in order to form luminescence centers. A combination of capacitance-voltage (CV ) and current-voltage (IV ) methods was used for the investigation of the trapping properties. It was found that at electric ÿelds ¡ 8 MV=cm electron trapping dominates while at higher electric ÿelds which are typically required for the EL operation of the devices positive charge trapping occurs. It is assumed, that the trapping sites which are responsible for the trapping of the positive charge are in strong relation to the defects causing the luminescence.