This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100
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Correlation of electrical and optical properties with charge collection efficiency of In-doped and In+Si co-doped CdTe
✍ Scribed by E. Belas; R. Grill; J. Franc; P. Hlídek; V. Linhart; T. Slavíček; P. Höschl
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 275 KB
- Volume
- 591
- Category
- Article
- ISSN
- 0168-9002
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