Correlation of charge trapping and elect
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T. Gebel; L. Rebohle; J. Sun; W. Skorupa; A.N. Nazarov; I. Osiyuk
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Article
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2003
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Elsevier Science
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English
โ 204 KB
In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO2 layers. Thermally grown 80 nm thick SiO2 layers were implanted with Ge ions at energies of 30 -50 keV to peak concentrations of 1-6 at%. Subsequently rapid thermal annealing was performed at 1