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Correlation between implantation defects and dopants in Fe-implanted SiC

✍ Scribed by A. Declémy; A. Debelle; C. Dupeyrat; L. Thomé; I. Monnet; D. Eyidi

Publisher
Springer
Year
2011
Tongue
English
Weight
651 KB
Volume
106
Category
Article
ISSN
1432-0630

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We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te