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Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon

✍ Scribed by A.V. Dvurechenskii; R. Groetzschel; V.P. Popov

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 318 KB
Volume: 116
Category: Article
ISSN: 0375-9601
DOI: 10.1016/0375-9601(86)90064-2

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