𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Copper-based metallization for ULSI circuits

✍ Scribed by J. Torres; J.L. Mermet; R. Madar; G. Crean; T. Gessner; A. Bertz; W. Hasse; M. Plotner; F. Binder; D. Save

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
237 KB
Volume
34
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

✦ Synopsis

The feasibility of copper metallization for interconnections in ultra-large scale integrated circuits is under evaluation in the ESPRIT/JESSI project COIN (Copper INterconnections). Research has been performed comprising all basic aspects of copper metallization for integrated circuits, such as development and evaluation of processes for metal deposition and patterning, evaluation of materials which could act as barrier against copper diffusion, electrical testing of the barrier layer performance and finally evaluation of the electromigration pertbrmance of copper interconnections.

πŸ“œ SIMILAR VOLUMES

Metallization technologies for ULSI
Metallization technologies for ULSI
✍ JM MartΓ­nez-Duart; JM Albella πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 809 KB
Copper electroless deposition technology
Copper electroless deposition technology for ultra-large-scale-integration (ULSI) metallization
✍ Yosi Shacham-Diamand; Valery M. Dubin πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 711 KB

In this paper we present the technology of electroless Cu deposition for ultra-large-scale integration. The technology has several components: the solution chemistry, the operation conditions, the seeding, the equipment and the process integration. Sodium-free solution was used and optimized to achi

Copper dry etching technique for ULSI in
Copper dry etching technique for ULSI interconnections
✍ Matthias Markert; Andreas Bertz; Thomas Gessner πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 306 KB

As a consequence of the well-known difficulties in reactive dry Cu patterning only a small number of processes has been published world-wide. Using a simple C12 based chemistry including an intense ion bombardment as an alternative approach, the formation of thick sidewall films during etching (as p