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Conversion of a plasma enhanced chemical vapor deposited silicon–carbon–nitride thin film at ultra-low temperature by oxygen plasma

✍ Scribed by Steven M. Smith; Tim Tighe; Diana Convey; Jaime Quintero; Yi Wei

Book ID
108289751
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
856 KB
Volume
516
Category
Article
ISSN
0040-6090

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Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p