Controllable growth of α- and β-FeSi2thin films on Si(100) by facing-target sputtering

✍ Scribed by Pan, S. S. ;Ye, C. ;Teng, X. M. ;Fan, H. T. ;Li, G. H.

• Book ID: 105363925
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 234 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622438

✦ Synopsis

Abstract

Single‐phase β‐ and α‐FeSi~2~ thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio‐frequency magnetron sputtering method. The role of the buffer layer on the formation of β‐ and α‐FeSi~2~ thin film was discussed. The composition of β‐FeSi~2~ thin film can be tuned from Fe enrichment to Si enrichment by altering the radio‐frequency input power applied on the Si or/and Fe target, and the β‐FeSi~2~ thin film has a high (202)/(220) orientation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)