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Control of low fe content in the preparation of semi-insulating InP by wafer annealing

✍ Scribed by D. Wolf; G. Hirt; G. Müller

Book ID
112816994
Publisher
Springer US
Year
1995
Tongue
English
Weight
492 KB
Volume
24
Category
Article
ISSN
0361-5235

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Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing
✍ K Kuriyama; Jun Takahashi; M Okada; M Uchida 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 142 KB

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5 £ 10 15 to 2.5 £ 10 15 cm 23 , which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) metho