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Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

✍ Scribed by K. Kuriyama; K. Ushiyama; T. Tsunoda; M. Uchida; K. Yokoyama

Book ID
107457769
Publisher
Springer US
Year
1998
Tongue
English
Weight
197 KB
Volume
27
Category
Article
ISSN
0361-5235

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Thermally stimulated current study of el
Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing
✍ K Kuriyama; Jun Takahashi; M Okada; M Uchida πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 142 KB

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5 Β£ 10 15 to 2.5 Β£ 10 15 cm 23 , which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) metho