Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing

✍ Scribed by K Kuriyama; Jun Takahashi; M Okada; M Uchida

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 142 KB
• Volume: 126
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(03)00179-0

✦ Synopsis

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5 £ 10 15 to 2.5 £ 10 15 cm 23 , which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e 1 ; e 2 ; e 3 ; e 4 and e 5 ; with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e 1 and e 5 produced by the irradiation with electron doses above 1 £ 10 15 cm 22 were linked to In P and P In antisite defects, respectively, that probably form complexes. Traps e 3 and e 4 produced by the irradiation with doses above 1 £ 10 14 cm 22 were associated with In and P vacancy related defects, respectively.