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Growth of semi-insulating InP: Fe in the low pressure hydride VPE system

✍ Scribed by R. Beccard; S. Beuven; K. Heime; R. Schmald; H. Jürgensen; P. Harde; M. Schlak


Book ID
107791935
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
648 KB
Volume
121
Category
Article
ISSN
0022-0248

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VPE growth of InGaAS/InP structures usin
✍ Dr. B. Diegner; T. Eberle; K. Jacobs 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 378 KB

## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure wa