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Selective growth of InP in the low pressure hydride VPE system

✍ Scribed by R. Beccard; A. Dehe; K. Heime; G. Laube; P. Speier

Book ID
112975534
Publisher
Springer US
Year
1991
Tongue
English
Weight
339 KB
Volume
20
Category
Article
ISSN
0361-5235

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VPE growth of InGaAS/InP structures usin
VPE growth of InGaAS/InP structures using the hydride system
✍ Dr. B. Diegner; T. Eberle; K. Jacobs πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 378 KB

## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure wa