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Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

✍ Scribed by M. F. Vilela; A. A. Buell; M. D. Newton; G. M. Venzor; A. C. Childs; J. M. Peterson; J. J. Franklin; R. E. Bornfreund; W. A. Radford; S. M. Johnson


Book ID
107453341
Publisher
Springer US
Year
2005
Tongue
English
Weight
282 KB
Volume
34
Category
Article
ISSN
0361-5235

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Thick films of InxGa~\_xAs (x = 0.53 +\_0.04) have been grown on misoriented silicon substrates by molecular beam epitaxy as a function of substrate temperature and layer thickness. For films of 3 pm thickness, grown in the temperature range Tg = 200 to 550°C, the films became increasingly rough as