✦ LIBER ✦

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

✍ Scribed by Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi; Iwasa, Naruhito; Yamada, Takao; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu; Kozaki, Tokuya; Umemoto, Hitoshi; Sano, Masahiko; Chocho, Kazuyuki

Book ID: 120501821
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 282 KB
Volume: 72
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.121250

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

InGaN/GaN/AlGaN-based laser diodes with

InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

✍ Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi; Iwasa, Naruhito; Yamada, 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 323 KB

InGaN/GaN/AlGaN-based laser diodes with

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

✍ Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi; Iwasa, Naruhito; Yamada, 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 349 KB

Ten-Milliwatt Operation of an AlGaN-Base

Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate

✍ Nishida, T. ;Kobayashi, N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 503 KB

Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wa

Optical characterization of InGaN/AlGaN/

Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide

✍ Haddou EL Ghazi; Anouar Jorio; Izeddine Zorkani; Mohamed Ouazzani-Jamil 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 164 KB

InGaN laser diodes with reduced AlGaN cl

InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate

✍ Stańczyk, S.; Czyszanowski, T.; Kafar, A.; Czernecki, R.; Targowski, G.; Leszcz 📂 Article 📅 2013 🏛 American Institute of Physics 🌐 English ⚖ 821 KB

Continuous-Wave Operation of InGaN Multi

Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

✍ Kuramoto, M. ;Sasaoka, C. ;Hisanaga, Y. ;Kimura, A. ;Yamaguchi, A. A. ;Sunakawa, 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 159 KB 👁 2 views