InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

✍ Scribed by Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi; Iwasa, Naruhito; Yamada, Takao; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu; Kozaki, Tokuya; Umemoto, Hitoshi; Sano, Masahiko; Chocho, Kazuyuki

• Book ID: 120501820
• Publisher: American Institute of Physics
• Year: 1998
• Tongue: English
• Weight: 349 KB
• Volume: 72
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.120688