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Continuous analytical monitoring of nitrogen during the growing of silicon carbide single crystals

โœ Scribed by V. V. Korolev; V. I. Ionov; M. E. Shuvalova


Publisher
Springer US
Year
1980
Tongue
English
Weight
425 KB
Volume
33
Category
Article
ISSN
0021-9037

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In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra