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Mathematical model of the process of growing single-crystal silicide films on silicon

✍ Scribed by I. V. Medvedev; G. A. Chechko; N. I. Khodakovskii


Publisher
Springer US
Year
1994
Tongue
English
Weight
289 KB
Volume
69
Category
Article
ISSN
1573-8795

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## Investigation of the Single Crystal Growing Process of Neodymium-doped YAG Garnets Using Radiotracers Radioisotopic methods of investigation of Nd behaviour during pulling of single crystals of YAG-type garnets were applied. For the investigation of homogeneity of Nd distribution a n autoradiog