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Conductivity Modulation of Porous Silicon by Formation Parameters

✍ Scribed by Dutta, S.K. ;Hossain, S.M. ;Chakraborty, S. ;Saha, H.

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
187 KB
Volume
191
Category
Article
ISSN
0031-8965

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✦ Synopsis

Subject classification: 61.43.Gt; 72.80.Cw Conductivity of Porous Silicon (PS) can be modulated significantly by controlling its formation parameters like anodization current density and HF concentration in the electro-chemical cell and the doping concentration of the silicon wafer. It is established that not only the porosity but also the uniformity of the PS layer determines conductivity of the PS layer. A quantitative relationship between the effective conductivity and uniformity and porosity of the PS layer is presented and verified experimentally.

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