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Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface

โœ Scribed by Naoto Matsuo; Akio Sasaki


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
485 KB
Volume
39
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES


Anomalies in the growth of anodic oxide
โœ L. Young ๐Ÿ“‚ Article ๐Ÿ“… 1957 ๐Ÿ› Elsevier Science โš– 775 KB

During the growth of anodic oxide films, surface irregularities of the scale of the thickness of the oxide film are believed to be flattened. The original inner layers of the oxide (new layers are formed on the outside, since metal ions move) are, therefore, constrained to cover a progressively smal