✦ LIBER ✦

Conductance fluctuations in ultra-short-channel Si MOSFETS

✍ Scribed by S.Y. Chou; D.A. Antoniadis; H.I. Smith; M.A. Kastner

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 160 KB
Volume: 61
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(87)90172-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hole transport in p-channel Si MOSFETs

✍ Santhosh Krishnan; Dragica Vasileska; Massimo V. Fischetti 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 239 KB

Distribution function of hopping conduct

Distribution function of hopping conductance fluctuations of a short GaAs field effect transistor channel

✍ A.O. Orlov; M.E. Raikh; I.M. Ruzin; A.K. Savchenko 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 280 KB

Flicker noise in hot electron degraded s

Flicker noise in hot electron degraded short channel MOSFETs

✍ M. Stegherr 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 162 KB

On the drain current saturation in short

On the drain current saturation in short channel MOSFETs

✍ A. Benfdila; F. Balestra 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 186 KB

A novel silicide nanopatterning method f

A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs

✍ Q.T Zhao; F Klinkhammer; M Dolle; L Kappius; S Mantl 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 621 KB

A novel nanometer patterning technique was developed to pattern epitaxial CoSi layers and to fabricate Schottky-2 tunneling MOSFETs. The nanopatterning method is based on the local oxidation of silicide layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi layers on Si(100)

Bipolar mechanisms present in short chan

Bipolar mechanisms present in short channel SOI-MOSFET transistors

✍ G. Janczyk 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 238 KB