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Hole transport in p-channel Si MOSFETs

โœ Scribed by Santhosh Krishnan; Dragica Vasileska; Massimo V. Fischetti


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
239 KB
Volume
36
Category
Article
ISSN
0026-2692

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Hole transport in narrow modulation doped Si1-xGex channels grown on vicinal Si(1 1 3) by molecular beam epitaxy is studied. Owing to the strong step-bunching properties of the Si(1 1 3) surface, the Si1-xGex channels exhibit regular terraces with a width of typical 250 nm and a mean step height of