A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs
✍ Scribed by Q.T Zhao; F Klinkhammer; M Dolle; L Kappius; S Mantl
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 621 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
A novel nanometer patterning technique was developed to pattern epitaxial CoSi layers and to fabricate Schottky-2 tunneling MOSFETs. The nanopatterning method is based on the local oxidation of silicide layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi layers on Si(100) after patterning by local rapid thermal oxidation in dry 2 oxygen. A Schottky-tunneling MOSFET with epitaxial CoSi Schottky contacts at both the source and the drain was 2 fabricated using this nanopatterning method to make the 100 nm gate. The device shows good I-V characteristics at 300 K.