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Conceptual design of a helicon ion source for high-current dc accelerators

✍ Scribed by Hwang, Y. S.; Hong, I. S.; Eom, G. S.

Book ID
125477737
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
240 KB
Volume
69
Category
Article
ISSN
0034-6748

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Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is