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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

✍ Scribed by Hareland, S.A.; Manassian, M.; Shih, W.-K.; Jallepalli, S.; Wang, H.; Chindalore, G.L.; Tasch, Al.F.; Maziar, C.M.

No coin nor oath required. For personal study only.

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