A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

✍ Scribed by Hareland, S.A.; Krishnamurthy, S.; Jallepalli, S.; Choh-Fei Yeap; Hasnat, K.; Tasch, A.F., Jr.; Maziar, C.M.

• Book ID: 114536351
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 925 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.477597