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Compositional and electrical properties of SiO2/Si3N4/SiO2 stacked films grown onto silicon substrates and annealed in hydrogen

✍ Scribed by S. Santucci; R. Alfonsetti; A. Di Giacomo; P. Fiorani; L. Lozzi; G. Moccia; L. Ottaviano; M. Passacantando; P. Picozzi

No coin nor oath required. For personal study only.

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