✦ LIBER ✦

Comparison of the hole mobility in undoped and boron-doped polycrystalline CVD diamond films

✍ Scribed by Yuri Pleskov; Alik Tameev; Valentin Varnin; Irina Teremetskaya

Publisher: Springer
Year: 1998
Tongue: English
Weight: 124 KB
Volume: 3
Category: Article
ISSN: 1432-8488
DOI: 10.1007/s100080050126

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Carrier-density dependence of the hole m

Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

✍ Jakob J. Brondijk; Francesco Maddalena; Kamal Asadi; Herman J. van Leijen; Marti 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 318 KB

## Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^−3^. Hole‐only diodes were used for densities below 10^16^ cm^−3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^−3^. To fill the gap, i

ChemInform Abstract: Application of Elec

ChemInform Abstract: Application of Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) in the Preparation of Hydrogenated SiC Films: A Comparison of Phosphorus and Boron Doping.

✍ S. F. YOON; R. JI 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 30 KB 👁 1 views

The dopant density and temperature depen

The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon : Sheng S. Li. Solid-St. Electron. 21, 1109 (1978)

📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 130 KB