𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2substrates

✍ Scribed by R. Hübner; M. Hecker; N. Mattern; V. Hoffmann; K. Wetzig; H.-J. Engelmann; E. Zschech

Book ID
105888866
Publisher
Springer
Year
2004
Tongue
English
Weight
490 KB
Volume
379
Category
Article
ISSN
1618-2650

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of silicon carbide thin
Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates
✍ P. Zanola; E. Bontempi; C. Ricciardi; G. Barucca; L.E. Depero 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra