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Comparison of rapid ramp voltage and tunnelling injection stress experiments for the characterization of thin MOS gate oxides

✍ Scribed by O. Brière; P. Cottin; A. Straboni

Book ID: 115990359
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 312 KB
Volume: 187
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(95)00136-0

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