Comments on "The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors" [with reply]

✍ Scribed by Heremans, P.; Bellens, R.; Groeseneken, G.; Maes, H.E.

• Book ID: 114534496
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 795 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.121710