The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

✍ Scribed by Doyle, B.S.; Bourcerie, M.; Bergonzoni, C.; Benecchi, R.; Bravis, A.; Mistry, K.R.; Boudou, A.

• Book ID: 114536819
• Publisher: IEEE
• Year: 1990
• Tongue: English
• Weight: 913 KB
• Volume: 37
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.57138