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Comparison of electrical characteristics of P+Si and B+Si coimplanted active layers in SI GaAs

✍ Scribed by Ďuriček, Ľ. ;Bunčiak, M. ;Boháček, P.

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
386 KB
Volume
139
Category
Article
ISSN
0031-8965

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An ultrathin, a few monolayers (MLs) thick Si -layer, has been embedded in GaAs. The Si -layer properties have been electrically and structurally characterized. A conductivity transition has been observed, when going from free carrier transport in thin ()1 ML) ordered -layers to the disordered condi