Properties of Si δ-layers embedded in GaAs

✍ Scribed by P.O Holtz; B Sernelius; A.V Buyanov; G Pozina; L.D Madsen; H.H Radamson; J Thordson; T.G Andersson; J.P McCaffrey; B Monemar

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 186 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00052-6

✦ Synopsis

An ultrathin, a few monolayers (MLs) thick Si -layer, has been embedded in GaAs. The Si -layer properties have been electrically and structurally characterized. A conductivity transition has been observed, when going from free carrier transport in thin ()1 ML) ordered -layers to the disordered conditions for Si -layers thicker than 4 MLs. Two novel emission bands are observed in photoluminescence (PL) for Si -layers in the width range 1-4 MLs, but solely at below bandgap excitation. The pronounced 2D properties of these -layers have been clearly demonstrated by an observed blue shift of the PL characterization as the thickness of the Si -layer is reduced. The so-derived results on the transition energies and the electronic structure are in good agreement with theoretical predictions obtained by a self-consistent approach.